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| Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2169 / 2SC6017 Applications * High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features * * * * Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW100s Conditions Ratings (-50)100 (--)50 (-)6 (--)10 (--)13 (-)2 0.95 Tc=25C 20 150 --55 to +150 Unit V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)1A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz IC=(--)5A, IB=(-)250mA IC=(--)5A, IB=(-)250mA 200 (130)200 (90)60 (--290)180 (--)0.93 (--580)360 (--)1.4 Ratings min typ max (--)10 (--)10 (560)700 MHz pF mV V Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505EA TS IM TB-00001269 No.8275-1/5 2SA2169 / 2SC6017 Continued from preceding page. Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)100A, IE=0 IC=(--)1mA, RBE= IE=(-)100A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min (--50)100 (--)50 (--)6 (70)40 (650)1000 (60)80 typ max Unit V V V ns ns ns Package Dimensions unit : mm 2045B 6.5 5.0 4 Package Dimensions unit : mm 2044B 2.3 1.5 0.5 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 1.2 0.85 1 0.6 0.8 0.5 2 3 2.5 7.5 1.2 0.85 0.7 5.5 7.0 0.6 1 2 3 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 2.3 2.3 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB + 470F RL + 100F VBE= --5V IC=20IB1= --20IB2=3A VCC=20V For PNP, the polarity is reversed. --5.0 IC -- VCE 2SA2169 --16 A m mA 5.0 IC -- VCE 2SC6017 --4.5 A --14m Collector Current, IC -- A 4.5 Collector Current, IC -- A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.5 0 --2 8 --1 mA --12mA --10mA 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 2 1 A 0m 8mA 16m A 14mA 12mA 10mA 8mA --8mA --6mA --4mA --2mA 6mA 4mA 2mA IB=0 0 0.5 1.0 1.5 2.0 IT08962 IB=0 --1.0 --1.5 --2.0 IT08961 0 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.8275-2/5 2SA2169 / 2SC6017 --1.0 IC -- VBE 2SA2169 VCE= --2V 1.0 IC -- VBE 2SC6017 VCE=2V Collector Current, IC -- A --0.6 Collector Current, IC -- A --0.8 0.8 0.6 --0.4 0.4 Ta= --25 C Ta= --25 C 25C 75C 25C 0.6 --0.2 0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 Base-to-Emitter Voltage, VBE -- V 1000 7 IT08963 1000 Base-to-Emitter Voltage, VBE -- V 75C IT08964 hFE -- IC Ta=75C hFE -- IC Ta=75C 25C --25C 2SA2169 VCE= --2V DC Current Gain, hFE 7 5 2SC6017 VCE=2V 5 DC Current Gain, hFE 25C 3 --25C 3 2 2 100 7 5 --0.01 100 7 5 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 5 7 --10 IT08965 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB Collector Current, IC -- A 3 5 7 10 IT08966 Cob -- VCB 2SA2169 f=1MHz Output Capacitance, Cob -- pF 2SC6017 f=1MHz Output Capacitance, Cob -- pF 3 2 2 100 7 5 100 7 5 3 3 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 3 IT08967 3 f T -- IC Collector-to-Base Voltage, VCB -- V IT08968 f T -- IC Gain-Bandwidth Product, f T -- MHz 100 7 5 Gain-Bandwidth Product, f T -- MHz 2 2SA2169 VCE= --5V 2 2SC6017 VCE=5V 100 7 5 3 2 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT08969 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT08970 No.8275-3/5 2SA2169 / 2SC6017 --1.0 7 5 3 2 --0.1 7 5 3 2 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SA2169 IC / IB=20 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 0.01 2 3 VCE(sat) -- IC 2SC6017 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5C =7 Ta 5C --2 25 = Ta C 75 5C --2 C 25 C --0.01 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT08971 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 5 VCE(sat) -- IC Collector Current, IC -- A 7 5 7 10 IT08972 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2SA2169 IC / IB=50 5 3 2 2SC6017 IC / IB=50 0.1 7 5 3 2 C 25 Ta C =75 C 25 = Ta C 75 5C --2 C --25 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 5 7 --10 IT08973 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 VBE(sat) -- IC Collector Current, IC -- A 3 5 7 10 IT08974 VBE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V --1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2SA2169 IC / IB=50 2 2SC6017 IC / IB=50 25C Ta= --25C 1.0 25C Ta= --25C 7 5 7 5 75C 75C 3 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 7 --10 IT08975 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 ASO Collector Current, IC -- A 1.0 0.95 5 7 10 IT08976 PC -- Ta ICP=13A (PW100s) 10s 2SA2169 / 2SC6017 10 Collector Current, IC -- A 0m Collector Dissipation, PC -- W IC=10A 10 0 s 10 0.8 s s 0 50 s 1m DC op 2SA2169 / 2SC6017 Tc=25C Single Pulse For PNP minus sign is omitted. 2 3 5 7 1.0 2 3 5 0.6 ms N o he era tio n at sin k 0.4 0.2 0.01 0.1 0 7 10 2 3 5 7 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V IT09360 Ambient Temperature, Ta -- C IT09361 No.8275-4/5 2SA2169 / 2SC6017 25 PC -- Tc 2SA2169 / 2SC6017 Collector Dissipation, PC -- W 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT09362 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8275-5/5 |
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